AON4413

AON4413 P-Channel Enhancement Mode Field Effect Transistor General Description The AON4413 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This www.DataSheet4U.com device is suitable for use as a load switch or in PWM applications. Standard product AON4413 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V (VGS = -10V) ID = -6.5A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -6V) D D D D G DFN 3x2 D D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS ±20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG -6.5 -5.3 -25 3.1 2.0 -55 to 150 -4.7 -3.7 1.6 1.0 W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady State Steady State RθJA RθJL Typ 34 66 20 Max 40 80 25 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID = -250µA, VGS = 0V VDS = -30V, VGS = 0V TJ = 55°C VDS = 0V, VGS = ±20V VDS = VGS ID = -250µA VGS = -10V, VDS = -5V VGS = -10V, ID = -6.5A Static Drain-Source On-Resistance VGS = -6V, ID = -5.3A gFS VSD IS Forward Transconductance VDS = -5V, ID = -6.5A IS = -1A,V...