PowerTrench MOSFET. FDP8874 Datasheet

FDP8874 Datasheet PDF, Equivalent


Part Number

FDP8874

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
Download FDP8874 Datasheet PDF


FDP8874 Datasheet
November 2004
FDP8874
N-Channel PowerTrench® MOSFET
30V, 114A, 5.3m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
www.DataSheet4U.com either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 5.3m, VGS = 10V, ID = 40A
• rDS(ON) = 6.6m, VGS = 4.5V, ID = 40A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
TO-220AB
FDP SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
Package Marking and Ordering Information
Device Marking
FDP8874
FDP8874
Device
FDP8874
FDP8874_NL (Note 4)
Package
TO-220AB
TO-220AB
Reel Size
Tube
Tube
D
S
Ratings
30
±20
114
102
16
Figure 4
105
110
0.73
-55 to 175
1.36
62
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
Tape Width
N/A
N/A
Quantity
50 units
50 units
©2004 Fairchild Semiconductor Corporation
FDP8874 Rev. A2

FDP8874 Datasheet
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 24V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
w w w . D a t a S h e e rtD4S(OUN). c o mDrain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 40A, VGS = 10V
ID = 40A, VGS = 4.5V
ID = 40A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain MillerCharge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V
ID = 40A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
tf
Turn-Off Delay Time
Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 40A
VGS = 4.5V, RGS = 4.7
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
ISD = 40A
ISD = 20A
ISD = 40A, dISD/dt = 100A/µs
ISD = 40A, dISD/dt = 100A/µs
Notes:
1: Package current limitation is 80A.
2: Starting TJ = 25°C, L = 51uH, IAS = 64A, VDD = 27V, VGS = 10V.
3: Pulse width = 100s.
4: FDP8874_NL is lead free product. FDP8874_NL marking will appear on the label.
Min Typ Max Units
30 - - V
- -1
µA
- - 250
- - ±100 nA
1.2 - 2.5
- 0.0036 0.0053
- 0.0045 0.0066
- 0.0062 0.0090
V
- 3130 -
pF
- 590 -
pF
- 345 -
pF
- 1.9 -
- 56 72 nC
- 30 38 nC
- 3.0 4.0 nC
- 9.0 - nC
- 6.0 - nC
- 11 - nC
- - 207 ns
- 10 - ns
- 128 -
ns
- 44 - ns
- 31 - ns
- - 112 ns
- - 1.25 V
- - 1.0 V
- - 32 ns
- - 18 nC
©2004 Fairchild Semiconductor Corporation
FDP8874 Rev. A2


Features Datasheet pdf FDP8874 November 2004 FDP8874 N-Channe l PowerTrench® MOSFET 30V, 114A, 5.3m General Description This N-Channel M OSFET has been designed specifically to improve the overall efficiency of DC/D C converters using www.DataSheet4U.com either synchronous or conventional swit ching PWM controllers. It has been opti mized for low gate charge, low rDS(ON) and fast switching speed. Features • rDS(ON) = 5.3mΩ , VGS = 10V, ID = 40 A • rDS(ON) = 6.6mΩ , VGS = 4.5V, I D = 40A • High performance trench tec hnology for extremely low rDS(ON) • L ow gate charge Applications • DC/DC converters • High power and current handling capability DRAIN (FLANGE) D SOURCE DRAIN GATE G S TO-220AB FDP SE RIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Contin uous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (No te 1) Continuous (Tamb = 25oC, VGS = 10V, with Rθ JA = 62oC/W) Pulsed EAS PD TJ, TS.
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