FDP8878

FDP8878 N-Channel PowerTrench® MOSFET November 2005 FDP8878 N-Channel Logic Level PowerTrench® MOSFET 30V, 40A, 15mΩ General Descriptions This N-Channel MOSFET has been designed specifically to Features „ rDS(ON) = 15mΩ, VGS = 10V, ID = 40A „ rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge „ High power and current handling capability „ RoHS Compliant www.DataSheet4U.com improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. D DRAIN (FLANGE) SOURCE DRAIN GATE G TO-220AB FDP SERIES D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 4.5V) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Operating and Storage Temperature (Note 4) L = 1mH, IAS = 11A L = 43µH,IAS = 32A Continuous (TC = 25oC, VGS = 10V) 40 36 141 60 22 40.5 -55 to 175 A A A mJ W o Ratings 30 ±20 Units V V C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 3.7 43 oC/W o C/W Package Marking and Ordering Information Device Marking FDP8878 Device FDP8878 Package TO-220 Reel Size Tube Tape Width n/a Quantity 45 units ©2005 Fairchild Semiconducto...