BTB1236A3

CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor Spec. No. : C854A3 Issued Date : 2004.07.28 Revised Date : Page No. : 1/4 BTB1236A3 Description High BVCEO www.DataSheet4U.com High current capability Symbol BTB1236A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (Note) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB Pd Tj Tstg Limits -180 -160 -5 -1.5 -3 0.5 900 150 -55~+150 Unit V V V A A A mW °C °C Note : Transistor mounted on a printed-circuit board. BTB1236A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO www.DataSheet4U.com *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. -180 -160 -5 60 30 Typ. 140 27 Max. -1 -1 -0.6 -1.5 200 Unit V V V µA µA V V MHz pF Spec. No. : C854A3 Issued Date : 2004.07.28 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range K 60~120 P 82~190 Q 120~200 BTB1236A3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current ...