K06N60

SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: Motor controls, Inverter  NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability  Very soft, fast recovery anti-parallel Emitter Controlled Diode PG-TO-220-3-1 (TO-220AB)  Isolated TO-220, 2.5kV, 60s  Pb-free lead plating; RoHS compliant  Qualified according to JEDEC1 for target applications  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-220-3-31 / -111 (FullPAK) Type SKP06N60 SKA06N60 VCE IC VCE(sat) Tj Marking Package 600V 6A 2.3V 150C K06N60 PG-TO-220-3-1 600V 5A 2.3V 150C K06N60 PG-TO-220-3-31 / -111 1 J-STD-020 and JESD-022 1 Rev. 2.4 12.06.2013 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  600V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC  600V, Tj  150C Power dissipation TC = 25C Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220)3 Operating junction and storage temperature Soldering temperature wav...