Fast IGBT
SKP06N60 SKA06N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
75% low...
Description
SKP06N60 SKA06N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
75% lower Eoff compared to previous generation combined with low conduction losses
Short circuit withstand time – 10 s
Designed for: Motor controls, Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel Emitter Controlled Diode
PG-TO-220-3-1 (TO-220AB)
Isolated TO-220, 2.5kV, 60s
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO-220-3-31 / -111 (FullPAK)
Type SKP06N60 SKA06N60
VCE IC VCE(sat) Tj Marking Package
600V
6A
2.3V
150C K06N60 PG-TO-220-3-1
600V
5A
2.3V
150C K06N60 PG-TO-220-3-31 / -111
1 J-STD-020 and JESD-022
1
Rev. 2.4 12.06.2013
Maximum Ratings Parameter
Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220)3 Operating junction and storage temperature Soldering temperature wav...
Similar Datasheet