CY-62146DV30

CY62146DV30 4-Mbit (256K x 16) Static RAM Features Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin-compatible with CY62146CV30 Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax Ultra low standby power Easy memory expansion with CE, and OE features Automatic power-down when deselected CMOS for optimum speed/power Packages offered 48-ball BGA and 44-pin TSOPII Also available in Lead-free packages Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has Logic Block Diagram AA190 A8 A7 A6 A5 A4 A3 A2 AA01 DATA IN DRIVERS 256K x 16 RAM Array ROW DECODER SENSE AMPS an automatic power-down feature that ...