iTR61810

iTR61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC Description The iTR61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configuration incorporates two stages of reactively combined amplifiers at the output preceded by an input amplifier stage. This single channel amplifier provides typically, 21 dB small signal gain and 31 dBm output power at 1 dB gain compression. ™ ™ ™ ™ ™ ™ 21 dB Typical Small Signal Gain 2.0:1 Typical Input VSWR, 2.5:1 Typical Output VSWR 31 dBm Output Power at 1 dB Gain Compression 32 dBm Output Power at 3 dB Gain Compression 22% Typical Power Added Efficiency at 1 dB Gain Comp Chip size: 6.55 mm x 2.67 mm x 0.1 mm Features www.DataSheet4U.com Absolute Ratings Parameter Positive Drain DC Voltage Negative DC Voltage Simultaneous (VD-VG) RF CW Input Power (50 Ω source) 27 Drain Current Storage Temperature Operating Base Plate Temp Thermal Resistance (Channel to Backside) Symbol VD VG VDG Pin dBm ID Tstg Tc Rjc Value 8.5 -2 +10.5 Unit V V V 1.2 -55 to +125 -40 to +85 12 A °C °C °C/W Electrical Characteristics (at 25°C) 50 Ω system, Vd=+8V, Quiescent Current (Idq=600 mA) Parameter Frequency Range Small Signal Gain P1dB Compression P3dB Compression PAE at 1dB Gain Comp. Min 6.0 15 28 30 12 Typ 21 31 32 22 Max 18.0 Unit GHz dB dBm dBm % Parameter ...