power amplifier MMIC
iTR39000 37-40 GHz 0.8 Watt Power Amplifier MMIC
Description
The iTR39000 is a high efficiency power amplifier designed ...
Description
iTR39000 37-40 GHz 0.8 Watt Power Amplifier MMIC
Description
The iTR39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The iTR39000 is a 3stage GaAs MMIC amplifier utilizing an advanced 0.15μm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. 24 dB small signal gain (typ.) 29 dBm saturated power out (typ.) Circuit contains individual source vias Chip Size 4.28 mm x 2.90 mm x 50 μm
Features
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Absolute Ratings
Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol VD VG VDG ID PIN TC TStg Rjc
Value +6 -2 +8 1092 20 -30 to +85 -55 to +125 17
Unit Volts Volts Volts mA dBm °C °C °C/W
(At 25°C) 50 Ω system, VD=+5 V, Quiescent current (IDQ) = 700 mA
Electrical Characteristics
Parameter Frequency Range Gate Supply Voltage (VG)1 Gain Small Signal Pin=0 dBm Gain Variation vs. Frequency Power Output at P1 dB Compression Power Output Saturated (Pin=+14.5 dBm) Drain Current at Pin=0 dBm
Min 37
Typ -0.15
Max 40
Unit GHz V dB dB dBm dBm mA
Parameter Drain Current at P1dB Compression Drain Current at Psat (Pin=+13 dBm) Power Added Efficiency (PAE) at P1dB...
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