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GBU4A

Galaxy Semi-Conductor

(GBU4x) SILICON BRIDGE RECTIFIERS

BL FEATURES GALAXY ELECTRICAL GBU4A --- GBU4M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 4.0 A SILICON BRIDGE RECT IFIERS ...


Galaxy Semi-Conductor

GBU4A

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BL FEATURES GALAXY ELECTRICAL GBU4A --- GBU4M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 4.0 A SILICON BRIDGE RECT IFIERS Ideal for printed circuit board Reliable low cos t cons truction utilizing m olded plas tic technique Plas tic m aterrial has U/L flam m ability clas s ification www.DataSheet4U.com GBU .933(23.7) .894(22.7) .185(4.7) .165(4.2) .160(4.1) .140(3.5) 45 .310(7.9) .290(7.4) 0 .140(3.56) .130(3.30) 94V-O + + .075(1.9)R.TYP. .085(2.16) .065(1.65) .740(18.8) .720(18.3) Mounting pos ition: Any Glass passivated chip junctions .080(2.03) .060(1.52) _ ~ ~ + .100(2.54) .085(2.16) .190(4.83) .210(5.33) .050(1.27) .040(1.02) .710(18) .690(17.5) .085(2.18) .075(1.90) .022(.56) .018(.46) inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. GBU 4A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard Tc=100 output current @TA =40 GBU 4B 100 70 100 GBU 4D 200 140 200 GBU 4G 400 280 400 4.0 3.0 150.0 GBU 4J 600 420 600 GBU 4K 800 560 800 GBU 4M 1000 700 1000 UNITS V V V A VRRM V R MS VDC 50 35 50 (note 1) (note 2) IF (AV) Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load Maximum instantaneous f orw ard voltage at 2.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =125 ...




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