FW342

Ordering number : ENN7912 FW342 N-Channel and P-Channel Silicon MOSFETs FW342 Features www.DataSheet4U.com For General-Purpose Switching Device Applications motor drives, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10µs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg duty cycle≤1% duty cycle≤1% duty cycle≤1% Mounted on a ceramic board (1500mm2!0.8mm)1unit, PW≤10s Mounted on a ceramic board (1500mm2!0.8mm), PW≤10s Conditions N-channel 30 ±20 6 7 10 24 1.8 2.2 150 --55 to +150 P-channel --30 ±20 --5 --5.5 --9 --20 Unit V V A A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=3A, VGS=4.5V ID=3A, VGS=4V 1.2 4.6 7.8 25 35 37 33 49 52 30 1 ±10 2.6 V µA µA V S mΩ mΩ mΩ Symbol Conditions Ratings min typ max Unit Marking : W342...