Document
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
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IRFW/I540A
BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A
D2-PAK
2
I2-PAK
n Lower RDS(ON) : 0.041 Ω (Typ.)
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25℃) * Total Power Dissipation (TC=25℃) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds
② ① ① ③ ①
Value 100 28 19.8 110 ±20 523 28 10.7 6.5 3.8 107 0.71 - 55 to +175
Units V A A V mJ A mJ V/ns W W W/℃
℃ 300
Thermal Resistance
Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.4 40 62.5 ℃/W Units
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
2001 Fairchild Semiconductor Corporation
1
IRFW/I540A
Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS
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N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25℃ unless otherwise specified)
Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(밠iller? Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------22.56 325 148 18 18 90 56 60 10.8 27.9 --4.0 100 -100 10 100 0.052 -380 170 50 50 180 120 78 --nC ns μA Ω S pF V V/℃ V nA Test Condition VGS=0V,ID=250μA ID=250μA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150℃ VGS=10V,ID=14A VDS=40V,ID=14A
④ ④
See Fig 7
VDS=5V,ID=250μA
RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
1320 1710
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=28A, RG=9.1Ω See Fig 13 VDS=80V,VGS=10V, ID=28A See Fig 6 & Fig 12 ④ ⑤
④⑤
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
① ④
Min. Typ. Max. Units --------132 0.63 28 110 1.5 --A V ns μC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25℃,IS=28A,VGS=0V TJ=25℃,IF=28A diF/dt=100A/μs
④
Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=1mH, IAS=28A, VDD=25V, RG=27Ω, Starting TJ =25℃ ③ ISD≤28A.