Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n ...
Description
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
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IRFW/I540A
BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A
D2-PAK
2
I2-PAK
n Lower RDS(ON) : 0.041 Ω (Typ.)
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25℃) * Total Power Dissipation (TC=25℃) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds
② ① ① ③ ①
Value 100 28 19.8 110 ±20 523 28 10.7 6.5 3.8 107 0.71 - 55 to +175
Units V A A V mJ A mJ V/ns W W W/℃
℃ 300
Thermal Resistance
Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.4 40 62.5 ℃/W Units
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
2001 Fairchild Semiconductor Corporation
1
IRFW/I540A
Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS
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N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25℃ unless oth...
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