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FM230-C

Formosa MS

(FM2xx-C) Chip Schottky Barrier Diodes

Chip Schottky Barrier Diodes FM220-C THRU FM2100-C Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.177(4.4) ...


Formosa MS

FM230-C

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Description
Chip Schottky Barrier Diodes FM220-C THRU FM2100-C Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. www.DataSheet4U.com 0.110(2.8) 0.094(2.4) Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.165(4.2) 0.150(3.8) 0.067(1.7) 0.060(1.5) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 2.0 50 0.5 10 Rq JA CJ TSTG -55 75 160 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE SK22 SK23 SK24 SK25 SK26 SK28 S210 V RRM *1 V RMS *2 VR *3 VF *4 Operating temperature (o C) (V) FM220 FM230 FM240 FM250 FM260 FM280 FM2100 20 30 40 50 60 80 100 (V) 14 21 28 35 42 56 70 (V) 20 30 4...




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