(IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs
HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM
IXFR 24N50Q (Electrically Isolated Back Surface)
N-Channel Enhancement...
Description
HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM
IXFR 24N50Q (Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on) 0.20 Ω 0.23 Ω
500 V 24 A 500 V 22 A trr ≤ 250 ns
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Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 500 500 ± 20 ± 30 26N50Q 24N50Q 26N50Q 24N50Q 26N50Q 24N50Q 24 22 104 96 26 24 30 1.5 5 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ J V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E153432
G
D
Isolated back surface*
G = Gate S = Source
D = Drain
* Patent pending
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab
300 2500 5
Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly: no screws, or isolation foils required l Space savings l High ...
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