FMBM5401

FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier This device has matched dies in SuperSOT-6. C2 E1 www.DataSheet4U.com C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, TSTG Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Value -150 -160 -5.0 -600 -55 ~ 150 Units V V V mA °C Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may e impaired. Electrical Characteristics Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE1 DIVID1 hFE2 DIVID2 hFE3 DIVID3 TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Conditions IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 IC = -10µA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100°C VEB = -3.0V, IC = 0 VCE = -5V, IC = -1mA hFE1(Die1)/hFE1(Die2) VCE = -5V, IC = -10mA hFE2(Die1)/hFE2(Die2) VCE = -5V, IC = -50mA hFE3(Die1)/hFE3(Die2) Min. -150 -160 -5.0 Max Units V V V -50 -50 -50 nA µA nA On Characteristics* DC Current Gain Variat...