FMBM5551

FMBM5551 NPN General Purpose Amplifier April 2005 FMBM5551 NPN General Purpose Amplifier This device has matched dies Sourced from process 16. See MMBT5551 for characteristics www.DataSheet4U.com E1 C1 C2 B2 E2 pin #1 B1 Mark: .3S2 Dot denotes pin #1 SuperSOTTM-6 Absolute Maximum Ratings * Symbol VCEO VCBO VEBO IC PC TJ TSTG TθJA Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Value 160 180 6 600 0.7 150 -55 ~ 150 180 Units V V V mA W °C °C °C/W * Pd total, for both transistors. For each transistor, Pd = 350mW Electrical Characteristics Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE1 DIVID1 hFE2 DIVID2 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain TC = 25°C unless otherwise noted Parameter Conditions IC = 1mA, IB = 0 IC = 100µA, IE = 0 IC = 10µA, IC = 0 VCB = 120V VCB = 120V, Ta = 100°C VEB = 4V VCE = 5V, IC = 1mA hFE1(Die1)/hFE1(Die2) VCE = 5V, IC = 10mA hFE2(Die1)/hFE2(Die2) Min. 160 180 6 Max Units V V V 50 50 50 80 0.9 80 0.95 1.1 250 1.05 nA µA nA On Characteristics Variation Ratio of hFE1 Between Die 1 and Die 2 DC Current Gain Variation Ratio of hFE2 Between Die 1 and Die 2 ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FMBM5551 Rev. D FMBM5551 ...