4Mbit CMOS 3.0 Volt Flash Memory
E ES S II
ADVANCED INFORMATION
Excel Semiconductor inc.
ES25P40
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Int...
Description
E ES S II
ADVANCED INFORMATION
Excel Semiconductor inc.
ES25P40
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
www.DataSheet4U.com
ARCHITECTURAL ADVANTAGES
Single power supply operation - 2.7V -3.6V for read and program operations Memory Architecture - Eight sectors with 512 Kb each Program - Page program ( up to 256 bytes) in 1.5ms (typical) - Program cycles are on a page by page basis Erase - 0.5s typical sector erase time - 3s typical bulk erase time Endurance - 100,000 cycles per sector (typical) Data Retention - 20 years (typical) Parameter Page - 256 Byte page independent from main memory for parameter storage - Seperate from array, erase time < 20ms Device ID - JEDEC standard two-byte electronic signature - RES instruction one-byte electronic signature for backward compatibility - Manufacturer and device type ID Process Technology - Manufactured on 0.18um process technology Package Option - Industry Standard Pinouts - 8-pin SO (208mil) package - All Pb-Free devices are RoHS Compliant
PERFORMANCE CHARACTERISTICS
Speed - 75Mhz clock rate (maximum) Power Saving Standby Mode - Standby mode 50uA (max) - Deep Power Down Mode 1uA (typical)
MEMORY PROTECTION FEATURES
Memory Protection - W# pin works in conjunction with Status Register Bits to protect specified memory areas - Status Register Block Protection Bits (BP2, BP1, BP0) in status register configure parts of memory as read only
SOFTWARE FEATURES
SPI Bus Compatible Serial ...
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