DMD5012

TetraFET DMD5012 DMD5012-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) B G (typ) 2 3 P (2 pls) A www.DataSheet4U.com H D 1 5 E (4 pls) F I 4 IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL FEATURES SUITABLE FOR BROAD BAND APPLICATIONS N M D1 PIN 2 PIN 4 O J K SIMPLE BIAS CIRCUITS ULTRA-LOW THERMAL RESISTANCE BeO FREE PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DRAIN 1 GATE 2 DIM A B C D E F G H I J K M N O P Millimetres 15.24 10.80 45° 9.78 8.38 27.94 1.52R 10.16 21.84 0.10 1.96 1.02 4.45 34.04 1.63R Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.15 0.23 0.02 0.13 0.13 0.38 0.13 0.13 Inches 0.600 0.425 45° 0.385 0.330 1.100 0.060R 0.400 0.860 0.004 0.077 0.040 0.175 1.340 0.064R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.006 0.009 0.001 0.005 0.005 0.015 0.005 0.005 LOW Crss HIGH GAIN – 15 dB MINIMUM APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 500W (290W -A Version) 125V ±20V 9A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibili...