BTB1243I3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C817I3 Issued Date : 2003.07.03 Revised Date : 2004.07.02 Page No. : 1/4 BTB1243I3 Features Low VCE(sat), VCE(sat)=-0.2 V (typical), at IC / IB = -2A / -0.1A Excellent current gain characteristics www.DataSheet4U.com Complementary to BTD1864I3 Symbol BTB1243I3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -50 -50 -6 -3 -7 1 15 150 -55~+150 Unit V V V *1 A W °C °C BTB1243I3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO www.DataSheet4U.com *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. -50 -50 -6 52 82 52 Typ. -0.2 -1 80 35 Max. -1 -1 -0.5 -1.5 560 Unit V V V µA µA V V MHz pF Spec. No. : C817I3 Issued Date : 2003.07.03 Revised Date : 2004.07.02 Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-30V, IE=0 VEB=-4V, IC=0 IC=-2A, IB=-0.1A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-0.1A VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range P 82~180 Q 120~270 R 180~390 S...