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TSSP4400 Dataheets PDF



Part Number TSSP4400
Manufacturers TEMIC Semiconductors
Logo TEMIC Semiconductors
Description GaAs/GaAlAs Infrared Emitting Diode
Datasheet TSSP4400 DatasheetTSSP4400 Datasheet (PDF)

TSSP4400 GaAs/GaAlAs Infrared Emitting Diode in Sideview Package Description TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue– grey tinted plastic package with spherical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors. www.DataSheet4U.com Features D High radiant power and high radiant intensity D Suitable for high pulse current operation D Low forward voltage D Angle of half intensity ϕ = ± 2.

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TSSP4400 GaAs/GaAlAs Infrared Emitting Diode in Sideview Package Description TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue– grey tinted plastic package with spherical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors. www.DataSheet4U.com Features D High radiant power and high radiant intensity D Suitable for high pulse current operation D Low forward voltage D Angle of half intensity ϕ = ± 22° D Peak wavelength l p = 925 nm D High reliability 94 8491 Applications High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN photodiodes or phototransistors. Infrared remote control and free air transmission systems for long transmission distance and medium wide angle requirements in combination with PIN photo diodes or photo modules. Suitable as replacement of CQX47. Absolute Maximum Ratings Tamb = 25_ C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.0 170 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W tp/T=0.5, tp=100 m s tp=100 m s t x 5sec, 2 mm from case TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 1 (5) TSSP4400 Basic Characteristics Tamb = 25_ C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y www.DataSheet4U.com Radiant Power Temp. Coefficient of f e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of l p Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 m s IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 m s IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF VF TKVF IR Cj Ie Ie Min Typ 1.3 2.4 –1.3 30 23 300 18 –0.8 ±22 925 50 0.2 800 500 800 500 Max 1.8 3.2 100 10 fe TKf e ϕ lp Dl TKl p tr tr tf tf Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns Typical Characteristics (Tamb = 25_ C unless otherwise specified) 250 PV – Power Dissipation ( mW ) 200 IF – Forward Current ( mA ) 100 94 7941 e 125 100 150 RthJA 100 75 50 50 0 0 20 40 60 80 25 0 0 20 40 60 80 100 94 8029 e Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature 2 (5) TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96 TSSP4400 101 I e – Radiant Intensity ( mW/sr ) 102 94 8189 e 1000 I F – Forward Current ( A ) tp / T = 0.01, IFM = 2 A 0.02 100 0.05 0.1 0.2 0.5 10–1 10–2 100 10 1 www.DataSheet4U.com 0.1 10–1 100 101 tp – Pulse Durati.


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