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TSSP4400
GaAs/GaAlAs Infrared Emitting Diode in Sideview Package
Description
TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue– grey tinted plastic package with spherical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors.
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Features
D High radiant power and high radiant intensity D Suitable for high pulse current operation D Low forward voltage D Angle of half intensity ϕ = ± 22° D Peak wavelength l p = 925 nm D High reliability
94 8491
Applications
High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN photodiodes or phototransistors. Infrared remote control and free air transmission systems for long transmission distance and medium wide angle requirements in combination with PIN photo diodes or photo modules. Suitable as replacement of CQX47.
Absolute Maximum Ratings
Tamb = 25_ C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.0 170 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W
tp/T=0.5, tp=100 m s tp=100 m s
t
x 5sec, 2 mm from case
TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96
1 (5)
TSSP4400
Basic Characteristics
Tamb = 25_ C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y
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Radiant Power Temp. Coefficient of f e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of l p Rise Time Fall Time
Test Conditions IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 m s IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 m s IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A
Symbol VF VF TKVF IR Cj Ie Ie
Min
Typ 1.3 2.4 –1.3 30 23 300 18 –0.8 ±22 925 50 0.2 800 500 800 500
Max 1.8 3.2 100
10
fe
TKf e ϕ
lp Dl
TKl p tr tr tf tf
Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns
Typical Characteristics (Tamb = 25_ C unless otherwise specified)
250 PV – Power Dissipation ( mW ) 200 IF – Forward Current ( mA ) 100
94 7941 e
125 100
150 RthJA 100
75 50
50 0 0 20 40 60 80
25 0 0 20 40 60 80 100
94 8029 e
Tamb – Ambient Temperature ( °C )
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
2 (5)
TELEFUNKEN Semiconductors Rev. A3, 16-Oct-96
TSSP4400
101 I e – Radiant Intensity ( mW/sr ) 102
94 8189 e
1000
I F – Forward Current ( A )
tp / T = 0.01, IFM = 2 A 0.02 100 0.05 0.1 0.2 0.5 10–1 10–2
100
10
1
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0.1 10–1 100 101 tp – Pulse Durati.