Emitting Diode. TSSP4400 Datasheet

TSSP4400 Datasheet PDF, Equivalent


Part Number

TSSP4400

Description

GaAs/GaAlAs Infrared Emitting Diode

Manufacture

TEMIC Semiconductors

Total Page 5 Pages
PDF Download
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TSSP4400 Datasheet
TSSP4400
GaAs/GaAlAs Infrared Emitting Diode in Sideview Package
Description
TSSP4400 is a high intensity infrared emitting diode in
GaAlAs on GaAs technology, molded in a clear, blue–
grey tinted plastic package with spherical side view lens.
The device is spectrally matched to silicon photodiodes
and phototransistors.
www.DataSheet4U.com
Features
D High radiant power and high radiant intensity
D Suitable for high pulse current operation
D Low forward voltage
D Angle of half intensity ϕ = ± 22°
D Peak wavelength lp = 925 nm
D High reliability
94 8491
Applications
High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN
photodiodes or phototransistors.
Infrared remote control and free air transmission systems for long transmission distance and medium wide angle
requirements in combination with PIN photo diodes or photo modules.
Suitable as replacement of CQX47.
Absolute Maximum Ratings
Tamb = 25_ C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
tp/T=0.5, tp=100 m s
tp=100 m s
xt 5sec, 2 mm from case
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
2.0
170
100
–55...+100
–55...+100
260
450
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
TELEFUNKEN Semiconductors
Rev. A3, 16-Oct-96
1 (5)

TSSP4400 Datasheet
TSSP4400
Basic Characteristics
Tamb = 25_ C
Parameter
Forward Voltage
Temp. Coefficient of VF
Reverse Current
Junction Capacitance
Radiant Intensity
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Radiant Power
Temp. Coefficient of f e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of lp
Rise Time
Fall Time
Test Conditions
Symbol Min Typ Max Unit
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 m s
IF = 100mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 m s
IF = 100 mA, tp = 20 ms
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A
VF
VF
TKVF
IR
Cj
Ie
Ie
fe
TKf e
ϕ
lp
Dl
TKl p
tr
tr
tf
tf
10
1.3 1.8 V
2.4 3.2 V
–1.3 mV/K
100 m A
30 pF
23 mW/sr
300 mW/sr
18 mW
–0.8 %/K
±22 deg
925 nm
50 nm
0.2 nm/K
800 ns
500 ns
800 ns
500 ns
Typical Characteristics (Tamb = 25_ C unless otherwise specified)
250 125
200 100
150
RthJA
100
75
50
50 25
0
0
94 8029 e
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
0
0
94 7941 e
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
2 (5) TELEFUNKEN Semiconductors
Rev. A3, 16-Oct-96


Features Datasheet pdf TSSP4400 GaAs/GaAlAs Infrared Emitting D iode in Sideview Package Description TS SP4400 is a high intensity infrared emi tting diode in GaAlAs on GaAs technolog y, molded in a clear, blue– grey tint ed plastic package with spherical side view lens. The device is spectrally mat ched to silicon photodiodes and phototr ansistors. www.DataSheet4U.com Featur es D High radiant power and high radian t intensity D Suitable for high pulse c urrent operation D Low forward voltage D Angle of half intensity ϕ = ± 22° D Peak wavelength l p = 925 nm D High r eliability 94 8491 Applications High p ower infrared emitter in light curtains , light barriers, transmissive or refle ctive sensors in combination with PIN p hotodiodes or phototransistors. Infrare d remote control and free air transmiss ion systems for long transmission dista nce and medium wide angle requirements in combination with PIN photo diodes or photo modules. Suitable as replacement of CQX47. Absolute Maximum Ratings Tamb = 25_ C Parameter Reverse .
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