JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
KTC2316
FEATURES Power dissip...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate
Transistors
KTC2316
FEATURES Power dissipation
www.DataSheet4U.com
TO-92L
TRANSISTOR (
NPN)
1. EMITTER
2. COLLECTOR
PCM:
0.9
W (Tamb=25℃)
3. BASE
Collector current 0.8 A ICM: Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=100mA VCB=10V, IE=0, f=1MHz
123
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=1mA, IE=0 Ic=10mA, IB=0 IE=1mA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=10mA
120 120 5 0.1 0.1 60 80 240 1 120
30
µA µA
V MHz pF
fT
Cob
CLASSIFICATION OF hFE(1) Rank Range Marking O 80-160 Y 120-240
...