GFD50N03

GFD50N03 N-Channel Enhancement-Mode MOSFET H C N T E TRE ENF VDS 30V RDS(ON) 9mΩ ID 65A D ® G TO-252 (DPAK) 0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23) 0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89) t c u rod P New G S 0.190 (4.826) www.DataSheet4U.com D 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49) 0.165 (4.191) G S 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96) 0.118 (3.0) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03) Dimensions in inches and (millimeters) 0.243 (6.172) 0.063 (1.6) Mounting Pad Layout Mechanical Data Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.4g Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters and motor drives Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg RθJC (2) C = 25°C unless otherwise noted) Limit 30 ± 20 Unit V 65 150 62.5 25.0 –55 to 150 2.0 40 A...