SUD30N04-10

SUD30N04-10 Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 FEATURES ID (A) 30a 30a rDS(on) (W) 0.010 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested www.DataSheet4U.com D TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View Order Number: SUD30N04-10 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 "20 30a 30a 120 50 125 97c - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mountd J Junction-to-Ambient ti t A bi t Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. Surface mounted on 1” FR4 board. Document Number: 70782 S-31724—Rev. D, 18-Aug-03 www.vishay.com Free Air RthJA RthJC Symbol Typical 45 110 1.5 Maximum 55 125 1.8 Unit _C/W 1 SUD30N04-10 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V 40 1 3 "100 1 50 150 30 0.085 0.01...