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SDD320

Sirectifier Semiconductors

Diode-Diode Modules

SDD320 Diode-Diode Modules 3 Type SDD320N08 SDD320N12 SDD320N14 SDD320N16 SDD320N18 VRSM V 900 1300 1500 1700 1900 VRRM ...


Sirectifier Semiconductors

SDD320

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Description
SDD320 Diode-Diode Modules 3 Type SDD320N08 SDD320N12 SDD320N14 SDD320N16 SDD320N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394") 2 1 www.DataSheet4U.com Symbol IFRMS IFAVM TVJ=TVJM TC=100oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 Test Conditions Maximum Ratings 480 320 Unit A IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 11500 12200 9600 10200 662000 620000 460000 430000 -40...+150 150 -40...+125 A i2dt A2s TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s o C 3000 3600 2.5-5/22-24 12-15/106-132 320 V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M8) Typical including screws SDD320 Diode-Diode Modules Symbol IRRM VF VTO rT www.DataSheet4U.com QS IRM RthJC RthJK dS dA a per diode; DC current per module per diode; DC current per module TVJ=TVJM; VR=VRRM IF=600A; TVJ=25 C o Test Conditions Characteristic Values 40 1.2 0.75 0.63 760 275 0.129 0.065 0.169 0.0845 12.7 9.6 50 Unit mA V V m uC A K/W K/W mm mm m/s2 For power-loss calculations only TVJ=TVJM TVJ=125 C; IF=400A; -di/dt=50A/us o Creepage distance on surface Strike distance through air Maximum allowable acceleration FEATURES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS * S...




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