Preliminary data
SPU30N03S2L-10
OptiMOS Power-Transistor
Feature
Product Summary VDS RDS(on) ID 30 10 30
P-TO251
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Preliminary data
SPU30N03S2L-10
OptiMOS Power-
Transistor
Feature
Product Summary VDS RDS(on) ID 30 10 30
P-TO251
N-Channel Logic Level Low on-resistance RDS(on) www.DataSheet4U.com Excellent Gate Charge x RDS(on) product (FOM) 175°C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications
Type SPU30N03S2L-10 Package P-TO251 Ordering Code Q67042-S4042 Marking 2N03L10
Superior thermal resistance
V m A
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C,1) TC=100°C
Symbol ID
Value 30 30
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
120 150 6 ±20 82 -55... +175 55/175/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =30 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =30A, VDS =24V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-02-11
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.DataSheet4U.com resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
2)
SPU30N03S2L-10
Values min. typ. max. 1.8 100 75 50 K/W Unit
Symbol
RthJC RthJA RthJA
-
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1mA
Symbol min. V(BR)...
