Power MOSFET
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80
I...
Description
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80
IXFH/IXFM 11 N80 IXFH/IXFM 13 N80
V DSS
800 V 800 V
I
D25
11 A 13 A
trr £ 250 ns
R DS(on)
0.95 W 0.80 W
Symbol VDSS VDGR VGS VGSM ID25
IDM
I
AR
EAR dv/dt
P D
TJ TJM Tstg TL Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
T C
= 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
Maximum Ratings TO-247 AD (IXFH)
800
V
800
V
±20
V
±30
V
(TAB)
11N80
11
A
13N80
13
A
TO-204 AA (IXFM)
11N80 13N80
44 52
A A
Package
unavailable
11N80
11
A
13N80
13
A
30
mJ
5
V/ns
G D
.
G = Gate,
D = Drain,
S = Source,
TAB = Drain
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
rated Low package inductance
- easy to drive and to protect Fast intrinsic Rectifier
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 3 mA
800
VDS = VGS, ID = 4 mA
2.0
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 0...
Similar Datasheet