DatasheetsPDF.com

IXFH20N60 Dataheets PDF



Part Number IXFH20N60
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXFH20N60 DatasheetIXFH20N60 Datasheet (PDF)

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V ID25 15 A 20 A RDS(on) 0.50 W 0.35 W trr £ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, .

  IXFH20N60   IXFH20N60



Document
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V ID25 15 A 20 A RDS(on) 0.50 W 0.35 W trr £ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 15N60 20N60 15N60 20N60 15N60 20N60 Maximum Ratings 600 600 ±20 ±30 15 20 60 80 15 20 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-204 AE (IXFM) D G = Gate, S = Source, G D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • Space savings • High power density 91526E (4/99) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 0.50 0.35 V V nA mA mA W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25 15N60 20N60 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 1-4 IXFH 15N60 IXFM 15N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 11 18 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 420 140 20 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 W (External) 43 70 40 151 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 29 60 40 60 90 60 170 40 85 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W IXFH 20N60 IXFM 20N60 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr www.DataSheet4U.com t d(off) VDS = 10 V; ID = 0.5 • ID25, pulse test tf Qg(on) Qgs Qgd RthJC RthCK Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse wid.


IXFH15N60 IXFH20N60 IN4936GP


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)