Document
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V
ID25 15 A 20 A
RDS(on) 0.50 W 0.35 W
trr £ 250 ns
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Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 15N60 20N60 15N60 20N60 15N60 20N60
Maximum Ratings 600 600 ±20 ±30 15 20 60 80 15 20 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TO-204 AE (IXFM)
D G = Gate, S = Source,
G
D = Drain, TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g
Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • Space savings • High power density
91526E (4/99)
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 0.50 0.35 V V nA mA mA W W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25
15N60 20N60 Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
IXFH 15N60 IXFM 15N60
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 11 18 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 420 140 20 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 W (External) 43 70 40 151 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 29 60 40 60 90 60 170 40 85 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
IXFH 20N60 IXFM 20N60
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr
www.DataSheet4U.com t
d(off)
VDS = 10 V; ID = 0.5 • ID25, pulse test
tf Qg(on) Qgs Qgd RthJC RthCK
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse wid.