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IXFM13N50 Dataheets PDF



Part Number IXFM13N50
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFET Power MOSFETs
Datasheet IXFM13N50 DatasheetIXFM13N50 Datasheet (PDF)

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID (cont) = 13 A RDS(on) = 0.4 W trr £ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C M.

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID (cont) = 13 A RDS(on) = 0.4 W trr £ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 500 500 ±20 ±30 13 52 13 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) D G W °C °C °C °C G = Gate, S = Source, D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V Applications DC-DC converters Uninterruptible Power Supplies (UPS) Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays q q q q q q q q VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % q q Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density IXYS reserves the right to change limits, test conditions, and dimensions. 91524D (10/95) © 2000 IXYS All rights reserved 1-4 IXFH 13N50 IXFH 13N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 7.5 9.0 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 300 70 18 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 4.7 W (External) 27 76 32 110 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 40 30 40 100 60 120 25 50 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr www.DataSheet4U.com t d(off) VDS = 10 V; ID = 0.5 ID25, pulse test tf Qg(on) Qgs Qgd RthJC RthCK Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 13 52 1.5 250 350 0.6 1.25 9 15 A A V ns ns mC mC A A J K L.


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