SM6G45A

SM6G45,SM6J45,SM6G45A,SM6J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45,SM6J45,SM6G45A,SM6J45A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S ON−State Current l High Commutating (dv / dt) www.DataSheet4U.com MAXIMUM Unit: mm : IT (RMS) = 6A RATINGS SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg 2 CHARACTERISTIC SM6G45 SM6G45A SM6J45 SM6J45A UNIT Repetitive Peak Off− State Voltage V R.M.S On−State Current (Full Sine Waveform Tc = 104°C) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 6 60 (50Hz) 66 (60Hz) 18 50 5 0.5 10 2 −40~125 −40~125 A A A s A / µs W W V A °C °C 2 JEDEC JEITA TOSHIBA Weight: 2.0g TO−220AB ― 13−10G1A 1 2001-07-13 SM6G45,SM6J45,SM6G45A,SM6J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I SM6G45 SM6J45 Gate Trigger Voltage SM6G45A SM6J45A II III IV I II III IV I SM6G45 SM6J45 Gate Trigger Current SM6G45A SM6J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off− State Voltage at Commutation SM6G45 SM6J45 SM6G45A SM6J45A VTM VGD IH Rth (j−c) ITM = 9A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, A...