SSM6J08FU

SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power Management Switch DC-DC Converter Unit: mm Small Package Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±12 V Drain current DC ID −1.3 A Pulse IDP (Note 2) −2.6 Drain power dissipation PD (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2J1D reliability significantly even if the operating conditions (i.e. Weight: 6.8 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6) Fig: 1. Note 2: The pulse width limited by max channel temperature. Marking Equivalent Circuit Fig 1: 25.4 mm × 25.4 mm × 1.6 t, Cu P...