SSM6J207FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J207FE
○ High-Speed Switching Applications
4 V drive Low ON-resistance:
Ron = 491 mΩ (max) (@VGS = −4 V) Ron = 251 mΩ (max) (@VGS = −10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDS
-30
V
Gate–source voltag...
