Document
SSM6J50TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J50TU
○ High Current Switching Applications
Unit: mm
• Compact package suitable for high-density mounting
• Low on-resistance:
Ron = Ron = Ron =
205mΩ (max) (@VGS = -2.0 V) 100mΩ (max) (@VGS = -2.5 V)
64mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
±10
V
Drain current
DC
ID
-2.5
A
Pulse
IDP
-5
1,2,5,6 : Drain
3
: Gate
4
: Source
Drain power dissipation Channel temperature
PD
500
mW
(Note 1)
Tch
150
°C
JEDEC
-
Storage temperature range
Tstg
−55 to 150
°C
JEITA
-
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2T1D
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 7 mg (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking
654
Equivalent Circuit
654
KPB
123
123
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production
2003-11
1
2014-03-01
SSM6J50TU
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current Gate threshold voltage Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time Turn-off time
Note2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±8 V, VDS = 0
⎯
⎯
±10
μA
V (BR) DSS V (BR) DSX
ID = −10 mA, VGS = 0 ID = −10 mA, VGS = +10 V
-20
⎯
⎯
V
-10
⎯
⎯
IDSS
VDS = −20 V, VGS = 0
⎯
⎯
−10
μA
Vth
VDS = −10 V, ID = −0.2 mA
−0.5
⎯
−1.2
V
⏐Yfs⏐
VDS = −10 V, ID = −1.5 A
(Note2) 3.1 6.2
⎯
S
RDS (ON)
ID = −1.5 A, VGS = −4.5 V ID = −1.5 A, VGS = −2.5 V
(Note2) ⎯
(Note2) ⎯
49
64
mΩ
73 100
ID = −1.5 A, VGS = −2.0 V
(Note2) ⎯
105 205
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯ 800 ⎯
pF
Crss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯ 120 ⎯
pF
Coss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯ 160 ⎯
pF
ton
VDD = −10 V, ID = −1.5 A,
toff
VGS = 0 to −5 V, RG = 4.7 Ω
⎯
15
⎯
ns
⎯
51
⎯
Switching Time Test Circuit
(a) Test Circuit
0 −5 V.