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SSM6J50TU Dataheets PDF



Part Number SSM6J50TU
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Datasheet SSM6J50TU DatasheetSSM6J50TU Datasheet (PDF)

SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J50TU ○ High Current Switching Applications Unit: mm • Compact package suitable for high-density mounting • Low on-resistance: Ron = Ron = Ron = 205mΩ (max) (@VGS = -2.0 V) 100mΩ (max) (@VGS = -2.5 V) 64mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±10 V Drain current DC ID -2.5 A Puls.

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SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J50TU ○ High Current Switching Applications Unit: mm • Compact package suitable for high-density mounting • Low on-resistance: Ron = Ron = Ron = 205mΩ (max) (@VGS = -2.0 V) 100mΩ (max) (@VGS = -2.5 V) 64mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±10 V Drain current DC ID -2.5 A Pulse IDP -5 1,2,5,6 : Drain 3 : Gate 4 : Source Drain power dissipation Channel temperature PD 500 mW (Note 1) Tch 150 °C JEDEC - Storage temperature range Tstg −55 to 150 °C JEITA - Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2T1D high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 7 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Marking 654 Equivalent Circuit 654 KPB 123 123 Handling Precaution When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2003-11 1 2014-03-01 SSM6J50TU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Note2: Pulse test Symbol Test Condition Min Typ. Max Unit IGSS VGS = ±8 V, VDS = 0 ⎯ ⎯ ±10 μA V (BR) DSS V (BR) DSX ID = −10 mA, VGS = 0 ID = −10 mA, VGS = +10 V -20 ⎯ ⎯ V -10 ⎯ ⎯ IDSS VDS = −20 V, VGS = 0 ⎯ ⎯ −10 μA Vth VDS = −10 V, ID = −0.2 mA −0.5 ⎯ −1.2 V ⏐Yfs⏐ VDS = −10 V, ID = −1.5 A (Note2) 3.1 6.2 ⎯ S RDS (ON) ID = −1.5 A, VGS = −4.5 V ID = −1.5 A, VGS = −2.5 V (Note2) ⎯ (Note2) ⎯ 49 64 mΩ 73 100 ID = −1.5 A, VGS = −2.0 V (Note2) ⎯ 105 205 Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 800 ⎯ pF Crss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 120 ⎯ pF Coss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 160 ⎯ pF ton VDD = −10 V, ID = −1.5 A, toff VGS = 0 to −5 V, RG = 4.7 Ω ⎯ 15 ⎯ ns ⎯ 51 ⎯ Switching Time Test Circuit (a) Test Circuit 0 −5 V.


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