N-Channel 100-V (D-S) MOSFET
www.vishay.com
Si7454DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PowerPAK® SO-8 Single D
D8 D7 D6 5
6.15 mm 1
T...
Description
www.vishay.com
Si7454DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PowerPAK® SO-8 Single D
D8 D7 D6 5
6.15 mm 1
Top View
5.15 mm
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 6 V Qg typ. (nC) ID (A) Configuration
1 2S 3S 4S G Bottom View
100 0.034 0.040
24 7.8 Single
FEATURES TrenchFET® power MOSFETs New low thermal resistance PowerPAK®
package with low 1.07 mm profile PWM optimized for fast switching 100 % Rg tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
Primary side switch for high density DC/DC Telecom / server 48 V, full- / half-bridge DC/DC Industrial and 42 V automotive
D
Available
G
N-Channel MOSFET
S
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
PowerPAK SO-8 Si7454DP-T1-E3 Si7454DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
10 s
STEADY STATE
Drain-source voltage
VDS
100
100
Gate-source voltage
VGS
± 20
± 20
Continuous drain current (TJ = 150 °C) a
TA = 25 °C TA = 85 °C
ID
7.8
5
5.7
3.6
Pulsed drain current
IDM
30
30
Avalanche current Single avalanche energy (duty cycle 1 %)
L = 0.1 mH
IAS EAS
25 31
25 31
Continuous source current (diode conduction) a
IS
4
1.6
Maximum power dissipation a
TA = 25 °C TA = 85 °C
PD
4.8 2.6
1.9 1
Operating junction and storage temperature range Soldering recommendations (peak temperature) b, c
...
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