2SK3731

Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET ■ Features Low on-resistance, low Qg High avalanche resistance (1.4) Unit: mm 10.5±0.3 4.6±0.2 1.4±0.1 0.6±0.1 3.0±0.5 0 to 0.5 For PDP For high-speed switching 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 0 to 0.3 ■ Absolute www.DataSheet4U.com Maximum Ratings TC = 25°C 1 2 3 (10.2) (8.9) (6.4) (1.4) Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25°C Channel temperature Storage temperature * Symbol VDSS VGSS ID IDP EAS PD Tch Tstg Rating 230 ± 30 20 80 668 50 1.4 150 − 55 to + 150 Unit V V A A mJ W (2.1) 1: Gate 2: Drain 3: Source TO-220C-G1 Package Marking Symbol: K3731 °C °C Note) *: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Drain-source surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff current Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS Vth IDSS IGSS RDS(on) Yfs Ciss Coss Crss td(on) Tr td(off) tf VDD ≈ 100 V, ID = 10 A RL = 10 Ω, VGS = 10 V Conditions ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 184 V, VGS = 0 VGS = ±30 V, VDS = 0 VGS = 10 V, ID = 10 A VDS...