mode MOSFET. 2SK3731 Datasheet

2SK3731 MOSFET. Datasheet pdf. Equivalent

Part 2SK3731
Description N-channel enhancement mode MOSFET
Feature Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Qg • Hi.
Manufacture Panasonic
Datasheet
Download 2SK3731 Datasheet




2SK3731
Power MOSFETs
2SK3731
N-channel enhancement mode MOSFET
Features
Low on-resistance, low Qg
High avalanche resistance
Applications
For PDP
For high-speed switching
www.DataSheetA4Ub.scoomlute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
VDSS
VGSS
ID
IDP
EAS
230
±30
20
80
668
V
V
A
A
mJ
Power dissipation
Channel temperature
Storage temperature
PD 5 0
Ta = 25°C
1.4
Tch 150
Tstg 55 to +150
W
°C
°C
Note) *: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C
10.5±0.3
Unit: mm
4.6±0.2
1.4±0.1
1.4±0.1
0.8±0.1
2.54±0.3
2.5±0.2
0 to 0.3
123
(10.2)
(8.9)
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Marking Symbol: K3731
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff current
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
VDSS
Vth
IDSS
IGSS
RDS(on)
Yfs
Ciss
ID = 1 mA, VGS = 0
VDS = 10 V, ID = 1 mA
VDS = 184 V, VGS = 0
VGS = ±30 V, VDS = 0
VGS = 10 V, ID = 10 A
VDS = 10 V, ID = 10 A
VDS = 25 V, VGS = 0, f = 1 MHz
Short-circuit output capacitance
(Common-source)
Coss
Reverse transfer capacitance
(Common-source)
Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
Tr
td(off)
tf
VDD 100 V, ID = 10 A
RL = 10 , VGS = 10 V
Min Typ Max
230
2.0 4.0
10
±1
65 82
7 14
2 360
Unit
V
V
µA
µA
m
S
pF
394 pF
49 pF
31 ns
27 ns
214 ns
47 ns
Publication date: March 2004
SJG00038AED
1



2SK3731
2SK3731
Electrical Characteristics (continued) TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Diode foward voltage
Reverse recovery time
Reverse recovery charge
Gate charge load
Gate-source charge
Gate-drain charge
Thermal resistance (ch-c)
Thermal resistance (ch-a)
VDSF
trr
Qrr
Qg
Qgs
Qgd
Rth(ch-c)
Rth(ch-a)
IDR = 20 A, VGS = 0
L = 230 µH, VDD = 100 V
IDR = 10 A, di/dt = 100 A/µs
VDD = 100 V, ID = 10 A
VGS = 10 V
1.5 V
142 ns
668 nC
43 nC
6.6 nC
16 nC
2.5 °C/W
89.2 °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
www.DataSheet4U.com
Safe operation area
1 000
Non repetitive pulse
TC = 25°C
100 IDP
ID
10
t = 100 µs
t=
1 ms
1 t=
10 ms
101
DC
102
1
10 100 1 000
Drain-source voltage VDS (V)
PC Ta
100 (1) TC = Ta
(2) Without heat sink
50
(1)
(2)
0
0 25 50 75 100 125 150
Ambient temperature Ta (°C)
2 SJG00038AED







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