Silicon MOSFET. 2SK3737 Datasheet

2SK3737 MOSFET. Datasheet pdf. Equivalent

Part 2SK3737
Description N-Channel Silicon MOSFET
Feature Ordering number : ENN8390 2SK3737 2SK3737 Features www.DataSheet4U.com • Low • • N-Channel Silico.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SK3737 Datasheet




2SK3737
Ordering number : ENN8390
2SK3737
2SK3737 N-Channel Silicon MOSFET
FM Tuner, VHF Amplifier Applications
Features
www.DataSheet4U.cLomow noise.
High power gain.
Small reverse transfer capacitance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Drain-to-Source Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Marking : KA
Symbol
VDSX
IGSS
IDSS
VGS(off)
yfs
Ciss
Crss
PG
NF
Conditions
VGS=--4V, ID=100µA
VDS=0V, VGS=±5V
VDS=10V, VGS=0V
VDS=10V, ID=100µA
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=100MHz
See specified Test Circuit.
VDS=10V, VGS=0V, f=100MHz
See specified Test Circuit.
* : The 2SK3737 is classified by IDSS as follows (unit : mA) :
Rank
5
6
IDSS
6 to 10
8 to 12
Ratings
15
±5
30
150
150
--55 to +150
Unit
V
V
mA
mW
°C
°C
min
15
Ratings
typ
6.0*
11 16
2.4
0.035
35
max
±10
12*
--2.2
Unit
V
nA
mA
V
mS
pF
pF
dB
2.0 dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71505AD MS IM TB-00001592 No.8390-1/4



2SK3737
Package Dimensions
unit : mm
7023-011
0.3
3
0.15
0 to 0.1
www.DataSheet4U.com
12
0.65 0.65
2.0
0.3 0.6
0.9
1 : Drain
2 : Gate
3 : Source
SANYO : MCP
2SK3737
PG, NF Specified Test Circuit
L1
to 30pF
IN
L2
to 30pF
OUT
VG VD
L1 : 1.0mmφ copper wire 10mmφ 6T, tap : 2.5T from H side
L2 : 1.0mmφ copper wire 10mmφ 7T, tap : 4T from H side
30
4.0V
ID -- VDS
3.0V
25 2.0V 1.0V
0.8V
20
0.4V
15
0.2V
10 0V
--0.2V
5 --0.4V
VGS= --0.8V
0
0 2 4 6 8 10 12 14 16
Drain-to-Source Voltage, VDS -- V IT09911
yfs-- VGS
20
VDS=10V
16
12
8
4
0
--1.5 --1.0 --0.5
0
0.5 1.0 1.5
Gate-to-Source Voltage, VGS -- V IT09913
30
VDS=10V
25
ID -- VGS
20
15
10
5
0
--1.5
--1.0
--0.5
0
0.5 1.0 1.5
Gate-to-Source Voltage, VGS -- V
yfs-- ID
IT09912
3
VDS=10V
2
10
7
5
3
2
5 7 1.0
23
5 7 10
2
Drain Current, ID -- mA
IT09914
No.8390-2/4







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)