Silicon FET. 2SK3738 Datasheet

2SK3738 FET. Datasheet pdf. Equivalent

Part 2SK3738
Description N-Channel Junction Silicon FET
Feature Ordering number : ENN7671 2SK3738 N-Channel Junction Silicon FET 2SK3738 Impedance Converter Appli.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SK3738 Datasheet




2SK3738
Ordering number : ENN7671
2SK3738
N-Channel Junction Silicon FET
2SK3738
Impedance Converter Applications
Application
Impedance conversion.
Infrared sensor.
www.DataSheetF4Ue.acotmures
Small IGSS.
Small Ciss.
Ultrasmall package permitting applied sets to be
small and slim.
Package Dimensions
unit : mm
2124
[2SK3738]
0.75
0.3 0.6
3
0~0.1
12
0.5 0.5
1.6
0.2
0.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Marking : KB
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
IG=--10µA, VDS=0
VGS=--20V, VDS=0
VDS=10V, ID=1µA
VDS=10V, VGS=0
VDS=10V, VGS=0, f=1kHz
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, f=1MHz
1 : Source
2 : Drain
3 : Gate
SANYO : SMCP
Ratings
40
--40
10
1
100
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
min
--40
Ratings
typ
50
0.06
--1.5
0.13
1.7
0.7
max
--500
--2.3
130
Unit
V
pA
V
µA
mS
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42004GB TS IM TA-100829 No.7671-1/3



2SK3738
140
120
100
80
60
40
20
0
www.DataSheet4U.com 0
--1.2
3
2
ID -- VDS
2SK3738
140
VGS=0
--0.2V
--0.4V
--0.6V
--0.8V
--1.0V
--1.2V
--1.4V
1 234 5
Drain-to-Source Voltage, VDS -- V ITR00837
ID -- VGS
80
VDS=10V
IDSS=50µA 70
60
50
40
75°C 30
20
10
--1.0 --0.8 --0.6 --0.4 --0.2
0
0
Gate-to-Source Voltage, VGS -- V ITR00839
VGS(off) -- IDSS
VDS=10V
ID=1µA
120
100
80
60
40
20
0
0
--2.4
3
2
ID -- VDS
VGS=0
--0.2V
--0.4V
--0.6V
--0.8V
--1.0V
--1.2V
--1.4V
4 8 12 16 20
Drain-to-Source Voltage, VDS -- V ITR00838
ID -- VGS
160
VDS=10V
IDSS=100µA 140
120
100
80
60
40
20
--2.0 --1.6 --1.2 --0.8 --0.4
0
0
Gate-to-Source Voltage, VGS -- V ITR00840
yfs-- IDSS
VDS=10V
VGS=0
f=1kHz
--1.0
7
5
3 5 7 100
23
Drain Current, IDSS -- µA
IT06668
PD -- Ta
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06670
0.1
7
5
3 5 7 100
2
Drain Current, IDSS -- µA
IT06669
Ciss -- VDS
10
VGS=0
7 f=1MHz
5
3
2
1.0
7
5
3
1.0
23
5 7 10
23
57
Drain-to-Source Voltage, VDS -- V IT06671
No.7671-2/3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)