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HY27SS16561A

Hynix Semiconductor

(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32M...


Hynix Semiconductor

HY27SS16561A

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HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History Revision No. www.DataSheet4U.com 0.0 Initial Draft. 1) Change AC Parameter tCRY(1.8V) Before 50+tr(R/B#) 60+tr(R/B#) History Draft Date Apr. 04. 2005 Remark Preliminary 0.1 After Jul. 07. 2005 Preliminary 2) Change 256Mb Package Type. - WSOP package is changed to USOP package. - Figure & dimension are changed. 1) Correct the test Conditions (DC Characteristics table) Test Conditions (ICC1) Before Test Conditions (ILI, ILO) VIN=VOUT=0 to 3.6V tRC=50ns, CE#=VIL, IOUT=0mA tRC(1.8V=60ns, 3.3V=50ns) CE#=VIL, IOUT=0mA After VIN=VOUT=0 to Vcc (max) 0.2 2) Change AC Conditions table 3) Add tWW parameter ( tWW = 100ns, min) - Texts & Figures are added. - tWW is added in AC timing characteristics table. 4) Edit Copy Back Program operation step 5) Edit System Interface Using CE don’t care Figures. 6) Correct Address Cycle Map. 7) Change NOP (table 11) Main Array Before After 1 2 Aug. 08. 2005 Preliminary Spare Array 2 3 Rev 0.5 / Jun. 2006 1 HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Revision History Revision No. CP Before 0.050 0.100 - Continued - History 8) Correct PKG dimension (TSOP, USOP PKG) Draft Date Remark www.DataSheet4U.com After 9) Change VIL parameter (max.) 1.8V Before After 0.2xVcc 0.4 3.3V 0.2xVcc 0.8 0.2 10) Change AC Param...




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