Document
Si6968DQ
Vishay Siliconix
N-Channel 2.5-V (G-S) Battery Switch
PRODUCT SUMMARY
VDS (V) 20 RDS(ON) (W) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V ID (A) "6.5 "5.5
D
D
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TSSOP-8
D S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D S2 S2 G2 G1 G2
Si6968DQ
7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A, B Pulsed Drain Current Continuous Source Current (Diode Conduction)A, B Dissipation Maximum Power Dissi ationA, B Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C SYMBOL VDS VGS ID IDM IS PD TJ, Tstg LIMIT 20 "12 "6.4 "5.1 "30 1.5 1.5 0.96 –55 to 150 W _C A V UNIT
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Junction to AmbientA t v 10 sec Steady State Notes A. Surface Mounted on FR4 Board. B. t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70757. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56943—Rev. E, 02-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors SYMBOL RthJA RthJA 85 TYPICAL MAXIMUM 83 UNIT _C/W
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Si6968DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
PARAMETER STATIC Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain Source On Drain-Source On-State State ResistanceA Forward TransconductanceA Diode Forward VoltageA VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5.5 A VDS = 10 V, ID = 6.5 A IS = 1.5 A, VGS = 0 V 30 0.017 0.022 30 0.66 1.2 0.022 0.030 W S V 0.6 "100 1 5 V nA mA A SYMBOL TEST CONDITION MIN TYP MAX UNIT
DYNAMICB www.DataSheet4U.com Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.5 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 10 V, ID = 6.5 A 16 3.4 4.0 20 48 90 55 40 40 80 180 110 70 ns 30 nC
Notes A. Pulse test; pulse width v 300 ms, duty cycle v 2%. B. Guaranteed by design, not subject to production testing.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56943—Rev. E, 02-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors
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Si6968DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Output Characteristics
30 VGS = 5 thru 2.5 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 30
Transfer Characteristics
18
2V
18
12
12 TC = 125_C 6 25_C 0 –55_C
6 1.5 V 0 0 2 4 6 8 10
0
0.5
1.0
1.5
2.0
2.5
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VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
OnĆResistance vs. Drain Current
0.04 3000
Capacitance
r DS(on) – On-Resistance ( W )
2500 C – Capacitance (pF) 0.03 VGS = 2.5 V VGS = 4.5 V
2000
Ciss
0.02
1500
1000 Coss 500 Crss
0.01
0 0 6 12 18 24 30
0 0 4 8 12 16 20
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
4.5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 6.5 A
Gate Charge
1.8 1.6 r DS(on) – On-Resistance (W ) (Normalized) 1.4 1.2 1.0 0.8 0.6
OnĆResistance vs. Junction Temperature
VGS = 4.5 V ID = 6.5 A
3.6
2.7
1.8
0.9
0 0 4 8 12 16
0.4 –50
0
50
100
150
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (_C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56943—Rev. E, 02-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors
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Si6968DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SourceĆDrain Diode Forward Voltage
20 0.08
OnĆResistance vs. GateĆtoĆSource Voltage
I S – Source Current (A)
TJ = 150_C
r DS(on) – On-Resistance ( W )
10
0.06
0.04
TJ = 25_C
0.02
ID = 6.5 A
1
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
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VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.4 ID = 250 mA 0.2 V GS(th) Variance (V) 30 25
Single Pulse Power
20 –0.0 Power (W)
15
–0.2
10 –0.4 5 –0.6 –50
0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 Time (sec) 1 10 30
Normalized Thermal Transient Impedance, JunctionĆtoĆAmbient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1
10
100
600
Square Wave Pulse Duration (sec) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S P.