Dual P-Channel 1.8-V (G-S) MOSFET
Si6969BDQ
New Product
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.030 @ V...
Description
Si6969BDQ
New Product
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.030 @ VGS = -4.5 V -12 0.040 @ VGS = -2.5 V 0.055 @ VGS = -1.8 V
ID (A)
-4.6 - 3.8 - 3.0
S1
S2
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TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2
Si6969BDQ
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
-12 "8 - 4.6
Steady State
Unit
V
-4.0 -3.2 -30 A -0.7 0.83 0.53 -55 to 150 W _C
ID IDM IS PD TJ, Tstg
-3.8
-1.0 1.14 0.73
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72017 S-22051—Rev. B, 18-Nov-02 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
88 120 65
Maximum
110 150 80
Unit
_C/W
1
Si6969BDQ
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V...
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