SI6969DQ

Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.034 @ VGS = - 4.5 V 0.050 @ VGS = - 2.5 V 0.075 @ VGS = - 1.8 V ID (A) "4.6 "3.8 "3.0 S1 S2 www.DataSheet4U.com D1 S1 S1 G1 1 2 3 4 D TSSOP-8 8 D2 7 S2 6 S2 5 G2 Top View D1 D2 G1 G2 Si6969DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 12 "8 "4.6 "3.8 "30 - 1.25 1.1 0.72 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70828 S-59527—Rev. A, 19-Oct-98 www.vishay.com t v 10 sec Steady State RthJA 115 Symbol Typical Maximum 110 Unit _C/W 2-1 Si6969DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 70_C VDS w - 8 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.6 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 3.8 A VGS = -...