SI6963BDQ

Si6963BDQ New Product Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) 0.045 @ VGS = −4.5 V 0.080 @ VGS = −2.5 V ID (A) −3.9 −3.0 S1 S2 www.DataSheet4U.com D1 S1 S1 G1 1 2 3 4 D TSSOP-8 8 D2 7 S2 6 S2 5 G2 G1 G2 Si6963BDQ Top View Ordering Information: Si6963BDQ-T1—E3 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 sec −20 "12 −3.9 −3.1 −30 −1.0 1.13 0.73 Steady State Unit V −3.4 −2.7 A −0.75 0.83 0.53 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. Document Number: 72772 S-40439—Rev. A, 15-Mar-04 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 90 125 67 Maximum 110 150 80 Unit _C/W 1 Si6963BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea VGS(th) IGSS IDSS ID(on) rDS(on) gf...