Document
FDS6680AS 30V N-Channel PowerTrench® SyncFET™
May 2008
FDS6680AS
tm
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
Applications
• 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (22nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability
• DC/DC converter • Low side notebooks
D D D D
SO-8
G SS S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6680AS
FDS6680AS
13’’
5 6 7 8
Ratings
30 ±20 11.5 50 2.5 1.2
1 –55 to +150
50 25
Tape width 12mm
4 3 2 1
Units
V V A W
°C
°C/W °C/W
Quantity 2500 units
©2008 Fairchild Semiconductor Corporation
FDS6680AS Rev B2(X)
FDS6680AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS ∆BVDSS
∆TJ IDSS
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th) ∆TJ
RDS(on)
Gate Threshold Voltage Temperature Coefficient
Static Drain–Source On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg(TOT) Total Gate Charge at Vgs=10V
Qg
Total Gate Charge at Vgs=5V
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C
VGS = 10 V,
ID = 11.5 A
VGS = 4.5 V, ID = 9.5 A.