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FDS6680AS Dataheets PDF



Part Number FDS6680AS
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 30V N-Channel MOSFET
Datasheet FDS6680AS DatasheetFDS6680AS Datasheet (PDF)

FDS6680AS 30V N-Channel PowerTrench® SyncFET™ May 2008 FDS6680AS tm 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680A.

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FDS6680AS 30V N-Channel PowerTrench® SyncFET™ May 2008 FDS6680AS tm 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. Applications • 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (22nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability • DC/DC converter • Low side notebooks D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6680AS FDS6680AS 13’’ 5 6 7 8 Ratings 30 ±20 11.5 50 2.5 1.2 1 –55 to +150 50 25 Tape width 12mm 4 3 2 1 Units V V A W °C °C/W °C/W Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDS6680AS Rev B2(X) FDS6680AS 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current gFS Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg(TOT) Total Gate Charge at Vgs=10V Qg Total Gate Charge at Vgs=5V Qgs Gate–Source Charge Qgd Gate–Drain Charge VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C VGS = 10 V, ID = 11.5 A VGS = 4.5 V, ID = 9.5 A.


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