BUK7C08-55AITE
TrenchPLUS standard level FET
M3D323
Rev. 01 — 19 August 2003
Product data
1. Product profile
1.1 Descr...
BUK7C08-55AITE
TrenchPLUS standard level FET
M3D323
Rev. 01 — 19 August 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power
transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ESD and overtemperature protection. Product availability:
www.DataSheet4U.com
BUK7C08-55AITE in SOT427 (D2-PAK).
1.2 Features
s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor.
1.3 Applications
s Variable Valve Timing for engines s Automotive and power switching s Electrical Power Assisted Steering s Fan control.
1.4 Quick reference data
s VDS ≤ 55 V s ID ≤ 130 A s RDSon = 6.8 mΩ (typ) s VF = 658 mV (typ) s SF = −1.54 mV/K (typ) s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pin 1 2 3 4 mb Pinning - SOT427, simplified outline and symbol Description gate (g) Isense anode (a) drain (d) mounting base; connected to drain (d) Pin 5 6 7 Description cathode (k)
d a
Simplified outline
Symbol
Kelvin source source (s)
1 2 3 4 5 6 7
mb
g
Front view
MBK128
MBL362
Isense
s
k Kelvin source
SOT427 (D2-PAK)
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain cu...