AP4226D

AP4226D Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ PDIP-8 Package G2 D1 D2 D2 D1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S2 G1 S1 30V 18mΩ 8.2A PDIP-8 Description www.DataSheet4U.com The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 8.2 6.7 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200218041 AP4226D Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.03 15 20 5 12 12 8 31 12 320 230 Max. Units 18 28 3 1 25 ±100 30 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A VGS=4.5V, ID=6A VGS(th) gfs IDSS IGS...