N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4226M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N MOSFET Package
SO-8
S1...
Description
AP4226M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N MOSFET Package
SO-8
S1 G1 D2 D1 D1 G2 S2 D2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 18mΩ 8.2A
Description
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The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 S1 D1
D2
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ± 20 8.2 6.7 30 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
201211031
AP4226M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 30 1 -
Typ. 0.03 15 20 5 12 12 8 31 12 320 230
Max. Units 18 28 3 1 25 ±100 30 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=6A VGS=4.5V, ID=4A
VGS(th) gfs IDS...
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