72SD3232 4-Banks Datasheet

72SD3232 Datasheet, PDF, Equivalent


Part Number

72SD3232

Description

1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks

Manufacture

Maxwell Technologies

Total Page 30 Pages
Datasheet
Download 72SD3232 Datasheet


72SD3232
72SD3232
1 Gbit SDRAM
32-Meg X 32-Bit X 4-Banks
www.DataSheet4U.com
Logic Diagram (One Amplifier)
FEATURES:
DESCRIPTION:
• 1 Gigabit ( 32-Meg X 32-Bit X 4-Banks)
• RAD-PAK® radiation-hardened against natural space
radiation
• Total Dose Hardness:
>100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
SELTH > 85 MeV/mg/cm2 @ 25°C
• JEDEC Standard 3.3V Power Supply
• Clock Frequency: 100 MHz Operation
• Operating tremperature: -55 to +125°C
• Auto Refresh
• Single pulsed RAS
• 2 Burst Sequence variations
Sequential (BL =1/2/4/8)
Interleave (BL = 1/2/4/8)
• Programmable CAS latency: 2/3
• Power Down and Clock Suspend Modes
• LVTTL Compatible Inputs and Outputs
• Package: 72-Pin RAD-Stack Package
Maxwell Technologies’ Synchronous Dynamic Random
Access Memory (SDRAM) is ideally suited for space
applications requiring high performance computing and
high density memory storage. As microprocessors
increase in speed and demand for higher density mem-
ory escalates, SDRAM has proven to be the ultimate
solution by providing bit-counts up to 1 Gigabits and
speeds up to 100 Megahertz. SDRAMs represent a sig-
nificant advantage in memory technology over traditional
SRAMs including the ability to burst data synchronously
at high rates with automatic column-address generation,
the ability to interleave between banks masking pre-
charge time, and the ability to randomly change column
address during each clock cycle.
Maxwell Technologies’ patented RAD-PAK® packaging
technology incorporates radiation shielding in the micro-
circuit package. It eliminates the need for box shielding
for a lifetime in orbit or space mission. In a typical GEO
orbit, RAD-PAK® provides greater than 100 krads(Si)
radiation dose tolerance. This product is available with
screening up to Maxwell Technologies self-defined Class
K.
02.04.05 Rev 3
All data sheets are subject to change without notice 1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2005 Maxwell Technologies
All rights reserved.

72SD3232
1 Gbit(32-Meg X 32-Bit X 4-Banks) SDRAM
72SD3232
www.DataSheet4U.com
Pinout Description
Pin Descriptions
Pin Name
A0 to A12
BA0, BA1
DQ0 to DQ7
DQ8 to DQ15
DQ16 to DQ23
DQ24 to DQ32
CS\
RAS\
CAS\
WE\
DQM 1
DQM 2
DQM 3
DQM 4
CLK1
CLK2
CKE
Vcc
Vss
VccQ
VssQ
NC
Function
Address Input
Row Address A0 to A12
Column Address A0 to A9
Bank Select Address BA0/BA1 (BS)
Data-Input/Output - Layer 1
Data-Input/Output - Layer 2
Data-Input/Output - Layer 3
Data-Input/Output - Layer 4
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Input/Output Mask - Layer 1
Input/Output Mask - Layer 2
Input/Output Mask - Layer 3
Input/Output Mask - Layer 4
Clock Input - Layer 1 & 3
Clock Input - Layer 2 & 4
Clock Enable
Power for internal circuits
Ground for internal circuits
Power for DQ circuits
Ground for DQ circuits
No Connection
02.04.05 Rev 3
All data sheets are subject to change without notice 2
©2005 Maxwell Technologies
All rights reserved.


Features 72SD3232 1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks www.DataSheet4U.com Logic Dia gram (One Amplifier) Memory FEATURES: • 1 Gigabit ( 32-Meg X 32-Bit X 4-Ba nks) • RAD-PAK® radiation-hardened a gainst natural space radiation • Tota l Dose Hardness: >100 krad (Si), depend ing upon space mission • Excellent Si ngle Event Effects: SELTH > 85 MeV/mg/c m2 @ 25° C DESCRIPTION: Maxwell Techn ologies’ Synchronous Dynamic Random A ccess Memory (SDRAM) is ideally suited for space applications requiring high p erformance computing and high density m emory storage. As microprocessors incre ase in speed and demand for higher dens ity memory escalates, SDRAM has proven to be the ultimate solution by providin g bit-counts up to 1 Gigabits and speed s up to 100 Megahertz. SDRAMs represent a significant advantage in memory tech nology over traditional SRAMs including the ability to burst data synchronousl y at high rates with automatic column-a ddress generation, the ability to interleave between banks masking precharg.
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