CGD1042H

CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 01 — 9 October 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. CAUTION www.DataSheet4U.com This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I I I I I I High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design 1.3 Applications I CATV systems operating in the 40 MHz to 1000 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Bandwidth to 1000 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified. Symbol Gp Itot [1] Parameter power gain total current Conditions f = 45 MHz f = 1000 MHz [1] Min 22.0 430 Typ 21.5 23.0 450 Max 24.0 470 Unit dB dB mA Direct Current (DC). NXP Semiconductors CGD1042H 1 GHz, 23 dB gain high output power doubler 2. Pinning information Table 2. Pin 1 2, 3 5 7, 8 9 Pinning Description input common +VB common output 2 3 7 8 sym095 Simplified outline Symbol 5 1 9 1 3 5 7 9 3. Ordering www.DataSheet4U.com information Table 3. Ordering information Package Name CGD1042H Description rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC an...