BUF654

BUF654 Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 kHz switching rate D Very low switching losses D www.DataSheet4U.com Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 12 18 6 9 80 150 –65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 1.56 Unit K/W TELEFUNKEN Semiconductors Rev. D2, 18-Jul-97 1 (9) BUF654 Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage g www.DataSheet4U.com DC forward current transfer ratio Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150° C IC = 500 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA IC = 2 A; IB = 0.5 A IC = 6 A; IB = 2 A IC =...