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PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier
Product specification Supersedes data of 2004 Apr 02 2004 Jun 14
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky barrier rectifier
FEATURES • Forward current: 1 A • Reverse voltages: 20 V, 30 V, 40 V • Very low forward voltage • Ultra small and very small plastic SMD package • Power dissipation comparable to SOT23.
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PMEGXX10BEA; PMEGXX10BEV
QUICK REFERENCE DATA SYMBOL IF VR PINNING PIN PMEGXX10BEA (see Fig.1) 1 2 PMEGXX10BEV (see Fig.2) 1, 2, 5, 6 3, 4 cathode anode cathode anode DESCRIPTION PARAMETER forward current reverse voltage 1 20; 30; 40 MAX. UNIT A V
APPLICATIONS • High efficiency DC-to-DC conversion • Voltage clamping • Protection circuits • Low voltage rectification • Blocking diodes • Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) and ultra small SOT666 SMD plastic package. MARKING TYPE NUMBER PMEG2010BEA PMEG3010BEA PMEG4010BEA PMEG2010BEV PMEG3010BEV PMEG4010BEV MARKING CODE V1 V2 V3 G6 G5 G4
1
2 1 2
sym001
Top view
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD323; SC-76) and symbol.
6
5
4
1, 2 5, 6
3, 4
sym038
1 Top view
2
3
Fig.2 Simplified outline (SOT666) and symbol.
2004 Jun 14
2
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky barrier rectifier
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEGXX10BEA PMEGXX10BEV
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PMEGXX10BEA; PMEGXX10BEV
DESCRIPTION plastic surface mounted package; 2 leads plastic surface mounted package; 6 leads
VERSION SOD323 SOT666
−
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR PARAMETER continuous reverse voltage PMEG2010BEA/PMEG2010BEV PMEG3010BEA/PMEG3010BEV PMEG4010BEA/PMEG4010BEV IF IFRM IFSM Tj Tamb Tstg Notes 1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. continuous forward current repetitive peak forward current non-repetitive peak forward current junction temperature operating ambient temperature storage temperature Ts ≤ 55 °C; note 1 tp ≤ 1 ms; δ ≤ 0.5; note 2 tp = 8 ms; square wave; note 2 note 3 note 3 − − − − − − − −65 −65 20 30 40 1 3.5 10 150 +150 +150 V V V A A A °C °C °C CONDITIONS MIN. MAX. UNIT
2004 Jun 14
3
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky barrier rectifier
THERMAL CHARACTERISTICS SYMBOL PMEGXX10BEA (SOD323) Rth(j-a) Rth(j-s) thermal resistance from junction to ambient thermal resistance from junction to soldering point in free air; notes 1 and 2 in free air; notes 2 and 3 note 4 PARAMETER CONDITIONS
PMEGXX10BEA; PMEGXX10BEV
VALUE
UNIT
450 210 90
K/W K/W K/W
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PMEGXX10BEV (SOT666) Rth(j-a) Rth(j-s) Notes 1. Refer to SOD323 (SC-76) standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm. 4. Solder point of cathode tab. 5. Refer to SOT666 standard mounting conditions. 6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). CHARACTERISTICS Tamb = 25 °C unless otherwise specified. PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/ PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT TYP. VF forward voltage IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IF = 1000 mA IR continuous reverse VR = 10 V; note 1 current VR = 20 V; note 1 VR = 30 V; note 1 VR = 40 V; note 1 Cd Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. diode capacitance VR = 1 V; f = 1 MHz 90 150 210 280 355 420 15 40 − − 66 MAX. 130 190 240 330 390 500 40 200 − − 80 TYP. 90 150 215 285 380 450 12 − 40 − 55 MAX. 130 200 250 340 430 560 30 − 150 − 70 TYP. 95 155 220 295 420 540 7 − − 30 43 MAX. 130 210 270 350 470 640 20 − − 100 50 mV mV mV mV mV mV µA µA µA µA pF thermal resistance from junction to ambient thermal resistance from junction to soldering point in free air; notes 2 and 5 in free air; notes 2 and 6 note 4 405 215 80 K/W K/W K/W
SYMBOL
PARAMETER
CONDITIONS
2004 Jun 14
4
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky barrier rectifier
GRAPHICAL DATA
104 handbook, halfpage IF (mA)
MHC673
PMEGXX10BEA; PMEGXX10BEV
1.