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PMEG4005AEV Dataheets PDF



Part Number PMEG4005AEV
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description (PMEGx005AEV) Very low VF MEGA Schottky barrier rectifiers
Datasheet PMEG4005AEV DatasheetPMEG4005AEV Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com M3D744 PMEG2005AEV; PMEG3005AEV; PMEG4005AEV Very low VF MEGA Schottky barrier rectifiers Product specification 2003 Aug 20 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers FEATURES • Very low forward voltage • High surge current • Ultra small plastic SMD package. APPLICATIONS www.DataSheet4U.com PMEG2005AEV; PMEG3005AEV; PMEG4005AEV QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reve.

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DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com M3D744 PMEG2005AEV; PMEG3005AEV; PMEG4005AEV Very low VF MEGA Schottky barrier rectifiers Product specification 2003 Aug 20 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers FEATURES • Very low forward voltage • High surge current • Ultra small plastic SMD package. APPLICATIONS www.DataSheet4U.com PMEG2005AEV; PMEG3005AEV; PMEG4005AEV QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage PMEG2005AEV PMEG3005AEV PMEG4005AEV PINNING PIN 1 2 3 4 5 6 DESCRIPTION cathode cathode anode anode cathode cathode 20 30 40 V V V MAX. 0.5 UNIT A • Low voltage rectification • High efficiency DC/DC conversion • Voltage clamping • Inverse polarity protection • Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package. handbook, halfpage 6 5 4 1, 2 5, 6 3, 4 MHC310 1 2 3 Fig.1 MARKING TYPE NUMBER PMEG2005AEV PMEG3005AEV PMEG4005AEV RELATED PRODUCTS TYPE NUMBER PMEGxx05AEA PMEG2005EB PMEG2010EA DESCRIPTION MARKING CODE G1 G2 G3 Simplified outline (SOT666 and symbol). FEATURE SOD323 (SC-76) package SOD523 (SC-79) package higher forward current 0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier 0.5 A; 20 V very low VF MEGA Schottky rectifier 1 A; 20 V very low VF MEGA Schottky rectifier 2003 Aug 20 2 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR PARAMETER continuous reverse voltage PMEG2005AEV PMEG3005AEV www.DataSheet4U.com CONDITIONS − − − note 1 tp ≤ 1 ms; δ ≤ 0.5; note 2 tp = 8 ms; square wave; note 2 note 3 note 3 − − − − MIN. MAX. 20 30 40 0.5 3.5 10 150 +150 +150 V V V A A A UNIT PMEG4005AEV continuous forward current repetitive peak forward current non-repetitive peak forward current junction temperature operating ambient temperature storage temperature IF IFRM IFSM Tj Tamb Tstg Notes °C °C °C −65 −65 1. Refer to SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel. 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses (PR) are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Notes 1. Refer to SOT666 standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mo.


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