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DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D744
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV Very low VF MEGA Schottky barrier rectifiers
Product specification 2003 Aug 20
Philips Semiconductors
Product specification
Very low VF MEGA Schottky barrier rectifiers
FEATURES • Very low forward voltage • High surge current • Ultra small plastic SMD package. APPLICATIONS
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PMEG2005AEV; PMEG3005AEV; PMEG4005AEV
QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage PMEG2005AEV PMEG3005AEV PMEG4005AEV PINNING PIN 1 2 3 4 5 6 DESCRIPTION cathode cathode anode anode cathode cathode 20 30 40 V V V MAX. 0.5 UNIT A
• Low voltage rectification • High efficiency DC/DC conversion • Voltage clamping • Inverse polarity protection • Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package.
handbook, halfpage 6
5
4
1, 2 5, 6
3, 4
MHC310
1
2
3
Fig.1 MARKING TYPE NUMBER PMEG2005AEV PMEG3005AEV PMEG4005AEV RELATED PRODUCTS TYPE NUMBER PMEGxx05AEA PMEG2005EB PMEG2010EA DESCRIPTION MARKING CODE G1 G2 G3
Simplified outline (SOT666 and symbol).
FEATURE SOD323 (SC-76) package SOD523 (SC-79) package higher forward current
0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier 0.5 A; 20 V very low VF MEGA Schottky rectifier 1 A; 20 V very low VF MEGA Schottky rectifier
2003 Aug 20
2
Philips Semiconductors
Product specification
Very low VF MEGA Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR PARAMETER continuous reverse voltage PMEG2005AEV PMEG3005AEV
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CONDITIONS − − − note 1 tp ≤ 1 ms; δ ≤ 0.5; note 2 tp = 8 ms; square wave; note 2 note 3 note 3 − − − −
MIN.
MAX. 20 30 40 0.5 3.5 10 150 +150 +150 V V V A A A
UNIT
PMEG4005AEV continuous forward current repetitive peak forward current non-repetitive peak forward current junction temperature operating ambient temperature storage temperature
IF IFRM IFSM Tj Tamb Tstg Notes
°C °C °C
−65 −65
1. Refer to SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel. 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses (PR) are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Notes 1. Refer to SOT666 standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mo.